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Synfacts 2008(1): 0043-0043  
DOI: 10.1055/s-2007-992399
Synthesis of Materials and Unnatural Products
© Georg Thieme Verlag Stuttgart · New York

A DAD Polymer for Near IR Optoelectronic Applications

Contributor(s): Timothy M. Swager, Ryan M. Moslin
E. Perzon, F. Zhang, M. Andersson, W. Mammo, O. Inganäs, M. R. Andersson*
Chalmers University of Technology, Göteborg and Linköping University, Sweden; Addis Ababa University, Ethiopia
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Publication History

Publication Date:
18 December 2007 (online)

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Significance

A new low bandgap (˜1.0 eV) polymer consisting of alternating electron-donating (D) and electron-accepting (A) segments is described. The D-A-D segment was joined by a dialkoxyphenylene unit to create a long-wavelength polymer photodetector. Bromination and reduction of 1 gave 2 in good yield, which was condensed with dione 3 to provide monomer 4. A polymeric Suzuki cross-coupling with co-monomer 5 and phenyl termination gave the desired polymer 6. A device consisting of 6 and a fullerene derivative (PCBM) gave a power conversion response of only 0.38%, compared with 5% for poly-3-hexylthiophene/PCBM devices. However, the 6/PCBM photodetectors were responsive at higher wavelengths with a (local) absorbance maximum at 950 nm.