DOI: 10.1055/s-00034926

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References

Mikhaylov AN, Tetelbaum DI, Burdov VA. , et al.
Effect of ion doping with donor and acceptor impurities on intensity and lifetime of photoluminescence from SiO2 films with silicon quantum dots.

J Nanosci Nanotechnol 2008;
8: 780-788

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